SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE
Résumé
Accurate extraction of the small-signal equivalent circuit elements of pseudomorphic high electron mobility transistors
(pHEMT) is crucial for the design of microwave analog circuits such as low noise amplifiers (LNAs). This paper presents a
direct analytical extraction procedure. Its efficiency is demonstrated on two different 1μm gate-length novel high breakdown
InGaAs/InAlAs pHEMTs: one is grown on a GaAs while the other is on an InP substrate.
Références
Z. Hemaizia & al.
64
[8] G. Chen, V. Kumar, R.S. Schwindt, I. Adesida, “A
low gate bias model extraction technique for
AlGan/GaN HEMTs,” IEEE Trans. Microwave Theory
Tech., vol. 54, July 2006.
[9] P.M. White, R.M. Healty, “Improved equivalent
circuit for determination of MESFET and HEMT
parasitic capacitances from cold FET measurements,”
IEEE Microwave Guided Wave Lett., vol. 3, Dec.
1993.
[10] E. Chigaeva, W. Walth, D.Wiegner, M. Grôzing,
F.Schaich, N. Wierser, M. Berroth,” Determination of
small signal parameters of GaN based HEMTs,”
IEEE/Cornell Conf. of High Performance Devices,
Cornell University, Ithaca, USA, 2000.
[11] K. Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaka,
Y. Ohasi, T. Saito, “An approach to determining an
equivalent circuit for HEMT’s,” IEEE Trans.
Microwave Theory Tech., vol. 43, March 1995.
[12] L.T. Wurtz, “GaAs FET and HEMT small-signal
parameter extraction from measured S-parameters,”
IEEE Trans. Instrumentation Measurement, vol. 43,
August 1994.
[13] A. Bouloukou, A.Sobih, D. Kettle, J. Sly, M. Missous.
Novel High Breakdown InGaAs/InAlAs pHEMTs for
radio astronomy applications. in Proceedings of the
4th ESA Workshop on Millimeter Wave Technology
and Applications (7th MINT Millimiter-Wave
International Symposium). 2006. Finland.
[14] Fukui, H.,” Design of Microwave GaAs MESFET’S
for Broad-Band Low-Noise Amplifiers”, IEEE Trans.
Microwave Theory Tech, vol. 27, 1979.
[15] Materka. T.K.a.A., “Compact dc Model of GaAs
FET’s for Large-Signal Computer Calculation”, IEEE
Journal of Solid-State Circuits, vol. 18, 1983.[1] G. Dambrine, A. Cappy, "A new method for
determination the FET small-signal equivalent circuit,"
IEEE Trans. Microwave Theory Tech., vol. 36, July
1988.
[2] M. Berroth, R. Bosh, "Broad-band determination of
the FET small-signal equivalent circuit," IEEE Trans.
Microwave Theory Tech., vol. 38, July 1990.
[3] R. Anholt, S. Swirhun, “Equivalent circuit parameter
for cold GaAs MESFETs,“ IEEE Trans. Microwave
Theory Tech., vol. 39, July 1991.
[4] D.A. Freckey, “Conversion between S, Z, Y, h
ABCD and T Parameters which are valid for complex
source and load impedances,” IEEE Trans. Microwave
Theory Tech., vol. 42, Feb. 1994.
[5] A. Caddemi, G. Crupi, N. Donato, “Microwave
characterization and modeling of packaged HEMTs by
a direct extraction procedure down to 30K,” IEEE
Trans. On Instrumentation and Measurement., vol. 55,
April 2006.
[6] R. Anholt, S. Swirhun, "Measurement and analysis of
GaAs MESFET parasitic capacitances,” IEEE Trans.
Microwave Theory Tech., vol. 39, July 1991.
[7] Y.A. Khalaf, “Systmatic optimization technique for
MESFET modeling,” PhD Thesis, University of
Virginia, USA, 2000.
64
[8] G. Chen, V. Kumar, R.S. Schwindt, I. Adesida, “A
low gate bias model extraction technique for
AlGan/GaN HEMTs,” IEEE Trans. Microwave Theory
Tech., vol. 54, July 2006.
[9] P.M. White, R.M. Healty, “Improved equivalent
circuit for determination of MESFET and HEMT
parasitic capacitances from cold FET measurements,”
IEEE Microwave Guided Wave Lett., vol. 3, Dec.
1993.
[10] E. Chigaeva, W. Walth, D.Wiegner, M. Grôzing,
F.Schaich, N. Wierser, M. Berroth,” Determination of
small signal parameters of GaN based HEMTs,”
IEEE/Cornell Conf. of High Performance Devices,
Cornell University, Ithaca, USA, 2000.
[11] K. Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaka,
Y. Ohasi, T. Saito, “An approach to determining an
equivalent circuit for HEMT’s,” IEEE Trans.
Microwave Theory Tech., vol. 43, March 1995.
[12] L.T. Wurtz, “GaAs FET and HEMT small-signal
parameter extraction from measured S-parameters,”
IEEE Trans. Instrumentation Measurement, vol. 43,
August 1994.
[13] A. Bouloukou, A.Sobih, D. Kettle, J. Sly, M. Missous.
Novel High Breakdown InGaAs/InAlAs pHEMTs for
radio astronomy applications. in Proceedings of the
4th ESA Workshop on Millimeter Wave Technology
and Applications (7th MINT Millimiter-Wave
International Symposium). 2006. Finland.
[14] Fukui, H.,” Design of Microwave GaAs MESFET’S
for Broad-Band Low-Noise Amplifiers”, IEEE Trans.
Microwave Theory Tech, vol. 27, 1979.
[15] Materka. T.K.a.A., “Compact dc Model of GaAs
FET’s for Large-Signal Computer Calculation”, IEEE
Journal of Solid-State Circuits, vol. 18, 1983.[1] G. Dambrine, A. Cappy, "A new method for
determination the FET small-signal equivalent circuit,"
IEEE Trans. Microwave Theory Tech., vol. 36, July
1988.
[2] M. Berroth, R. Bosh, "Broad-band determination of
the FET small-signal equivalent circuit," IEEE Trans.
Microwave Theory Tech., vol. 38, July 1990.
[3] R. Anholt, S. Swirhun, “Equivalent circuit parameter
for cold GaAs MESFETs,“ IEEE Trans. Microwave
Theory Tech., vol. 39, July 1991.
[4] D.A. Freckey, “Conversion between S, Z, Y, h
ABCD and T Parameters which are valid for complex
source and load impedances,” IEEE Trans. Microwave
Theory Tech., vol. 42, Feb. 1994.
[5] A. Caddemi, G. Crupi, N. Donato, “Microwave
characterization and modeling of packaged HEMTs by
a direct extraction procedure down to 30K,” IEEE
Trans. On Instrumentation and Measurement., vol. 55,
April 2006.
[6] R. Anholt, S. Swirhun, "Measurement and analysis of
GaAs MESFET parasitic capacitances,” IEEE Trans.
Microwave Theory Tech., vol. 39, July 1991.
[7] Y.A. Khalaf, “Systmatic optimization technique for
MESFET modeling,” PhD Thesis, University of
Virginia, USA, 2000.
Comment citer
HEMAIZIA, Z.; SENGOUGA, N.; MISSOUS, M..
SMALL-SIGNAL MODELING OF PHEMTS AND ANALYSIS OF THEIR MICROWAVE PERFORMANCE.
Courrier du Savoir, [S.l.], v. 10, mai 2014.
ISSN 1112-3338.
Disponible à l'adresse : >https://revues.univ-biskra.dz./index.php/cds/article/view/481>. Date de consultation : 14 nov. 2024
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