ETUDE COMPARATIVE DE LA METHODE DU PHOTO-COURANT CONSTANT EN REGIME PERIODIQUE (AC-CPM) ET CONTINU (DC-CPM) COMPARATIVE STUDY OF CONSTANT PHOTO-CURRENT METHOD IN PERIODIC REGIME (AC-CPM) AND CONTINUOUS REGIME (DC-CPM)
Résumé
Le but de ce travail est de comparer les résultats de caractérisation des défauts profonds dans le silicium amorphe hydrogéné
(a-Si : H) intrinsèque obtenus par la méthode de photo-courant constant en régime périodique (AC-CPM) et en régime continu
(DC-CPM). Pour cette raison, nous avons développé un programme de simulation qui tient en compte toutes les transitions
optiques possibles, a savoir les transitions optiques directes entre les états occupés et la bande de conduction et les transitions
optiques indirectes entre la bande de valence ou la queue de bande de valence et les états non occupés suivie par des émissions
thermiques convenables. Nous présentons ainsi la différence observée concernant le coefficient d’absorption optique et la
densité d’états profonds entre le régime périodique (mode AC) et le régime continu (mode DC). Ceci est du aux différences qui
existent entre les deux modes en termes de transitions optiques directes et indirectes.
The goal of this work is to compare the results concerning the characterization of the deep defect in the intrinsic hydrogenated
amorphous silicon (a-Si: H) by mean of constant photo-current method in periodic regime (AC-CPM) and continuous regime
(DC-CPM). For this reason, we have developed a simulation computer program including all the possible thermal and optical
transitions between gap and conduction band also those which have neglected before; between valence band or tail valence
band and non occupied deep states consistent by appropriate thermal emissions. We present the difference observed for the
optical absorption coefficient and the density of deep defect states between the periodic regime (AC mode) and the continuous
regime (DC mode). We affect this difference to the ability of the AC mode to feel only the direct optical transitions between
occupied deep defect and conduction band.
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